TETRAKIS(DIETHYLAMINO)ZIRCONIUM

CAS No.：13801-49-5

Other grades of this product :

TETRAKIS(DIETHYLAMINO)ZIRCONIUM Basic information

Description Reference

Product Name:	TETRAKIS(DIETHYLAMINO)ZIRCONIUM
Synonyms:	Tetrakis(diethylaMino)zirconiuM(IV), 99%;Zirconium, tetrakis(diethylamino)-;TETRAKIS(DIETHYLAMIDO)ZIRCONIUM(IV), ELECTRONIC GRADE, 99.99+%;Tetrakis(diethylamino)zirkonium;Tetrakis(diethylamino)zirconium,99%;tetrakis(diethylamido)zirconium(iv);TETRAKIS(DIETHYLAMINO)ZIRCONIUM;ZIRCONIUM DIETHYLAMIDE
CAS:	13801-49-5
MF:	C4H11NZr
MW:	164.36
EINECS:
Product Categories:	Precursors by Metal;metal amide complex;Vapor Deposition Precursors;Zirconium
Mol File:	13801-49-5.mol

TETRAKIS(DIETHYLAMINO)ZIRCONIUM Chemical Properties

Boiling point	128 °C/0.05 mmHg (lit.)
density	1.026 g/mL at 25 °C (lit.)
refractive index	n20/D 1.51(lit.)
Fp	54 °F
storage temp.	2-8°C
form	liquid
color	yellow
Sensitive	Moisture Sensitive

Safety Information

Hazard Codes	F,Xi
Risk Statements	11-14-36/37/38
Safety Statements	16-26-36
RIDADR	UN 3398 4.3/PG 2
WGK Germany	3
HazardClass	4.3
PackingGroup	II

MSDS Information

Provider	Language
ACROS	English
SigmaAldrich	English
ALFA	English

TETRAKIS(DIETHYLAMINO)ZIRCONIUM Usage And Synthesis

Description	Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers^1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method³.
Reference	Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992. Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001. Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.
Uses	Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions.
General Description	Atomic number of base material: 40 Zirconium

TETRAKIS(DIETHYLAMINO)ZIRCONIUM Preparation Products And Raw materials

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